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DOI:10.1103/physrevlett.133.037001 - Corpus ID: 261214382
@article{Adelsberger2023ValleyFreeSF, title={Valley-Free Silicon Fins Caused by Shear Strain}, author={Christoph Adelsberger and Stefano Bosco and Jelena Klinovaja and Daniel Loss}, journal={Physical Review Letters}, year={2023}, url={https://api.semanticscholar.org/CorpusID:261214382}}
- C. Adelsberger, S. Bosco, D. Loss
- Published in Physical Review Letters 25 August 2023
- Physics, Engineering
Electron spins confined in silicon quantum dots are promising candidates for large-scale quantum computers. However, the degeneracy of the conduction band of bulk silicon introduces additional levels dangerously close to the window of computational energies, where the quantum information can leak. The energy of the valley states -- typically 0.1 meV -- depends on hardly controllable atomistic disorder and still constitutes a fundamental limit to the scalability of these architectures. In this…
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Engineering conduction-band valley couplings is a key challenge for Si-based spin qubits. Recent work has shown that the most reliable method for enhancing valley couplings entails adding Ge…
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Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite attempts to enhance…
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